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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BAT54 SCHOTTKY BARRIER DIODE FEATURES * Very low turn-on voltage * Fast switching * For protecting the P/N junction guard ringagainst excessive voltage, such as electrostatic dis-charges * Surface mounting device .040 (1.02) .035 (0.88) SOT-23 .017 (0.42) .015 (0.38) MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .110 (2.80) .079 (2.00) .118 (3.00) (C) (A) (B) .071 (1.80) * Weight : apporx. 0.008g (C) (A) (A).NC (B).ANODE (C).CATHODE .028 (0.70) .020 (0.50) .055 (1.40) .047 (1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .045 (1.15) .033 (0.85) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge Forward Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRRM IF IFRM IFSM PD TJ TSTG BAT54 30 200 300 600 230 125 -65 to + 150 UNITS Volts mA mA mA mW 0 .006 (0.14) .003 (0.08) .102 (2.60) .094 (2.40) R0.05 (.002) C C 0 2001-12 ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Reverse Breakdown Voltage SYMBOL V(BR)R VF(1) VF(2) Forward Voltage VF(3) VF(4) VF(5) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr Value 30 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF nS Ir=10uA If=0.1mA If=1mA IF=10mA If=30mA If=100mA Vr=25V Vr=1V,f=1MHZ If=Ir=10mA,RL=100 ohm, measured at ir=1mA Testing Condition CHARACTERISTIC CURVES FIG. 1 - FORWARD CURRENT & FORWARD VOLTAGE 250 200 FORWARD CURRENT, iF(mA) DIODE CAPACITANCE,Cd (pF) FIG. 2 - DIODE CAPACITANCE 200 150 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100 100 50 0 0 200 400 600 800 1000 FORWARD VOLTAGE,VF (mV ) RECTRON |
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